Download 1991 Solar World Congress by S. M. A. Burley, M. Coleman, M. E. Arden PDF

By S. M. A. Burley, M. Coleman, M. E. Arden

The ISES sunlight international Congress, held in Denver, Colorado in August 1991 attracted over a thousand individuals from approximately 70 international locations, making it the biggest solar power occasion of its variety on the earth. As a long-lasting list of that congress, 630 papers are released the following in four volumes of complaints. quantity 1 is devoted to solar power, biofuels and renewable assets. quantity 2 includes papers on lively sun and sun warmth. Passive sun, socio-economic and academic points are thought of in quantity three, and at last the plenary classes, and the Farrington Daniels lecture are released in quantity four. 1991 sunlight global Congress offers the very most recent advances within the usage of different strength assets and expertise.

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Sze (1965). J. Appi Phys. 36, 3212. , C. Fishman, and T. Feng (1978). J. Appi Phys. 49, 3490-3498. M. (1981). Physics of Semiconductor Devices. 2nd Ed. 245-311. 32 SCATTERING MECHANISM TRANSPORT PROPERTIES IN AND ELECTRON CuInSe2 FILMS A. K. Chattopadhaya S» Chaudhuri and Department of Materials Science, Indian Association -for the Cultivation o-f Science, Calcutta - 700 032, India. ABSTRACT Films of CuInSe2 were produced at a substrate temperature of 620 - 670 K by co-evaporating elemental Cu, In &nd Se from three independent sources.

Comparable processing of GaAs cells, using 4-inch wafers and assuming 30% efficiency at lOOOx concentration, would create a capacity of more than 50 megawatts. This is more than the current annual world consumption of photovolt aies. Industries will not invest in this new capacity until they develop confidence that these large markets exists. Assuming that the PV market continues to grow at the existing rate of more than 25% per year, then by about 1995 the application of high-efficiency cells in high concentration systems should become widespread.

The purpose of our research at SERI is to investigate issues at the material and device level, with the intent of scaling our findings to the manufacturing process. Therefore, we address three relevant issues to furthering the advancement of the technology: material characterization, device development, and selenization. The ternary CuInSe2 material system is unique among semiconductors in its compositional flexibility and the dominant effect of compositional variations on the semiconductor material properties.

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